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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU807FI DESCRIPTION *High Voltage: VCBO= 330V(Min) *Low Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS *Designed for use in horizontal deflection circuits in TV's and CRT's. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO IC Emitter-Base Voltage 6 V Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB B Base Current Collector Power Dissipation @ TC=25 Junction Temperature 2 A PC 30 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU807FI MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.4 V ICES Collector Cutoff Current VCE= 330V; VBE= 0 0.1 mA ICEV Collector Cutoff Current VCE= 330V; VBE(off)= 6V 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 3.0 mA VECF C-E Diode Forward Voltage IF= 4A 2.0 V isc Websitewww.iscsemi.cn 2 |
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